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Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 811-814

Effect of growth conditions on electrical properties of Mg-doped p-GaN

(7) Svensk, O a Suihkonen, S a Lang, T a Lipsanen, H a Sopanen, M a Odnoblyudov, M A b Bougrov, V E b

a AALTO UNIVERSITY (Finland)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

A1. Doping; A3. MOCVD; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; HALL EFFECT; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CARRIER GAS; GROWTH ATMOSPHERE; GROWTH CONDITIONS; STRUCTURAL QUALITY;

GALLIUM NITRIDE;

EID: 33846425739 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.101 Document Type: Article

Times cited : (27)

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