High-density InAs quantum dots on GaNAs buffer layer

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5085-5088

  Suzuki, R ^a   Miyamoto, T ^a   Sengoku, T ^a   Koyama, F ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B2. Semiconducting gallium arsenide; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

ARSENIC COMPOUNDS; ATOMIC LAYER DEPOSITION; BUFFER LAYERS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; VAPOR DEPOSITION; VAPORS;

A1. LOW-DIMENSIONAL STRUCTURES; A1. NANOSTRUCTURES; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B2. SEMICONDUCTING GALLIUM ARSENIDE; B2. SEMICONDUCTING III-V MATERIALS; B3. LASER DIODES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 56249107178     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.033     Document Type: Article

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