Self Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1885-1887

  Kaizu, Toshiyuki ^a   Yamaguchi, Koichi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

Facet; InAs; Molecular beam epitaxy; Quantum dot; Self organization; Stranski Krastanov growth mode; Uniformity, size limiting mechanism

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

STRANSKI-KRASTANOV GROWTH MODES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035267320     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1885     Document Type: Article

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