Microwave irradiation effects on random telegraph signal in a MOSFET

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 370, Issue 5-6, 2007, Pages 491-493

  Prati, Enrico ^a   Fanciulli, Marco ^a   Calderoni, Alessandro ^b   Ferrari, Giorgio ^b   Sampietro, Marco ^b  

^a LABORATORIO MDM   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

IRRADIATION; MOSFET DEVICES; TELEGRAPH;

HARMONIC VOLTAGES; MICROWAVE FIELD; MOS-FET; RANDOM TELEGRAPH SIGNALS; TIME DEPENDENCY; TRANSITION PROBABILITIES;

MICROWAVE IRRADIATION;

EID: 35348942905     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2007.05.086     Document Type: Article

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