AFM anodization lithography on transparent conductive substrates

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 8, 2008, Pages 3838-3842

  Yamamoto, Takamichi ^a   Maekawa, Hideki ^a,b   Yamamura, Tsutomu ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Anodization; ARM; ITO; Lithography; SAM; Self assembled monolayer; SPM

Indexed keywords

ANODIZATION; ARM; ITO; SAM; SELF-ASSEMBLED MONOLAYER; SPM;

ACOUSTIC MICROSCOPES; AMPLITUDE MODULATION; ATOMIC FORCE MICROSCOPY; ELECTRON ENERGY LEVELS; GLASS; LITHOGRAPHY; MICROSCOPIC EXAMINATION; MISSILE BASES; SELF ASSEMBLED MONOLAYERS;

SUBSTRATES;

EID: 55849114953     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.191     Document Type: Article

References (25)

1. J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990).
2. E. S. Snow, P. M. Campbell, and P. J. McMarr, Appl. Phys. Lett. 63, 749 (1993).
3. T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen, and L. Ley, Appl. Phys. Lett. 67, 3144 (1995).
4. P. Avouris, T. Hertel, and R. Martel, Appl. Phys. Lett. 71, 285 (1997).
5. B. Legrand and D. Stievenard, Appl. Phys. Lett. 74, 4049 (1999).
6. M. Ara, H. Graaf, and H. Tada, Appl. Phys. Lett. 80, 2565 (2002).
7. M. Ara, H. Graaf, and H. Tada, Jpn. J. Appl. Phys. 41, 4894 (2002).
8. X. Hu and X. Hu, Ultramicroscopy 105, 57 (2005).
9. S. J. Ahn, Y. K. Jang, H. Lee, and H. Lee, Appl. Phys. Lett. 80, 2592 (2002).
10. D. Wang, L. Tsau, and K. L. Wang, Appl. Phys. Lett. 67, 1295 (1995).
11. E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996).
12. B. Irmer, M. Kehrle, H. Lorenz, and J. P. Kotthaus, Appl. Phys. Lett. 71, 1733 (1997).
13. K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata, and J. S. Harris, Appl. Phys. Lett. 76, 239 (2000).
14. R. Held, T. Vancura, T. Heinzel, K. Ensslin, M. Holland, and W. Wegscheider, Appl. Phys. Lett. 73, 262 (1998).
15. M. J. Yang, K. A. Cheng, H. Yang, and J. C. Culbertson, Appl. Phys. Lett. 80, 1201 (2002).
16. E. Tranvouez, P. Budau, and G. Bremond, Nanotechnology 17, 455 (2006).
17. J. S. Hwang, Z. S. Hu, Z. Y. You, T. Y. Lin, C. L. Hsiao, and L. W. Tu, Nanotechnology 17, 859 (2006).
18. H. Heinzelmann, D. Anselmetti, R. Wiesendanger, H.-j. Güntherodt, E. Kaldis, and A. Wisard, Appl. Phys. Lett. 53, 2447 (1988).
19. K. Terashima, M. Kondoh, Y. Takamura, H. Komaki, and T. Yoshida, Appl. Phys. Lett. 59, 644 (1991).
20. K. Szot and W. Speier, Phys. Rev. B 60. 5909 (1999).
21. I. Song. B. M. Kim, and G. Park, Appl. Phys. Lett. 76, 601 (2000).
22. R. Li, T. Kanki, H. Tohyama, J. Zhang, H. Tanaka, A. Takagi, T. Matsumoto, and T. Kawai, J. Appl. Phys. 95, 7091 (2004).
23. Y. Otsuka, Y. Naitou, Y. Matsumoto, and T. Kawai, Jpn. J. Appl. Phys. Lett. 41, L742 (2002).
24. H. Cao, L. Wang, Y. Qiu, and L. Zhang, Nanotechnology 17, 1736 (2006).
25. A. Terawaki, Y. Otsuka, H. Y. Lee, T. Matsumoto, H. Tanaka, and T. Kawai, Appl. Phys. Lett. 86, 113901 (2005).