Topographical and electrical study of contact and intermittent contact mode InP AFM lithography

Nanotechnology

Volumn 17, Issue 2, 2006, Pages 455-460

  Tranvouez, E ^a   Budau, P ^b   Bremond, G ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON;

INTERMITTENT CONTACT MODES; OXIDE GROWTH; SCANNING CAPACITANCE MICROSCOPY (SCM); SPACE CHARGES;

LITHOGRAPHY;

EID: 32644448333     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/17/2/019     Document Type: Article

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