On the preparation of semi-insulating SiC bulk crystals by the PVT technique

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 84-89

  Bickermann, M ^a   Hofmann, D ^a   Straubinger, T L ^a   Weingartner R ^a   Wellmann, P J ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Boron doping; Bulk growth; Dopant inhomogeneities; Silicon carbide; Vanadium doping

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; HALL EFFECT; SILICON WAFERS; VANADIUM;

UNDOPED CRYSTALS;

SILICON CARBIDE;

EID: 0035852261     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00481-0     Document Type: Article

References (15)