Mechanism of nitrogen incorporation in sublimation growth of SiC

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1192-1195

  Naitoh, Masami ^a   Hara, Kazukuni ^a   Hirose, Fusao ^a   Onda, Shoichi ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

A1. Doping; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL GROWTH; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SPECTRUM ANALYSIS; SUBLIMATION;

MULTIPLE BROAD EMISSIONS;

SINGLE CRYSTALS;

EID: 0036530649     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02166-2     Document Type: Article

References (9)