Growth of silicon carbide bulk crystals with a modified physical vapor transport technique

Chemical Vapor Deposition

Volumn 12, Issue 8-9, 2006, Pages 557-561

  Müller, Ralf ^a   Künecke, Ulrike ^a   Queren, Désirée ^a   Sakwe, Sakwe A ^a   Wellmann, Peter ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Dislocations; Doping; PVT method; SiC bulk growth

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); PHYSICAL VAPOR DEPOSITION; SILICON CARBIDE;

PVT METHOD; SIC BULK GROWTH; SILICON CARBIDE BULK CRYSTALS;

SINGLE CRYSTALS;

EID: 33845567936     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200606474     Document Type: Article

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