Growth of SiC polytypes by the physical vapour transport technique

Journal of Physics Condensed Matter

Volumn 16, Issue 17, 2004, Pages

  Semmelroth, K ^a   Schulze, N ^a,b   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; CRYSTAL GROWTH; PARAMETER ESTIMATION; PHYSICAL VAPOR DEPOSITION; SINGLE CRYSTALS; SUBLIMATION; THERMAL EFFECTS; THERMODYNAMICS;

BASAL PLANES; MICROPIPES; PHYSICAL VAPOR TRANSPORT; POLYTYPES;

SILICON CARBIDE;

EID: 2442615109     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/17/010     Document Type: Review

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