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Volumn 527-529, Issue PART 1, 2006, Pages 51-54
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Resistivity distribution in undoped 6H-SiC boules and wafers
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Author keywords
Compensation; Deep centers; Physical vapor deposition; Shallow impurities; Stoichiometry; Uniformity
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Indexed keywords
CRYSTAL GROWTH;
HOLE TRAPS;
PHYSICAL VAPOR DEPOSITION;
STOICHIOMETRY;
WAFER BONDING;
COMPENSATION;
DEEP CENTERS;
ELECTRICAL UNIFORMITY;
RESISTIVITY DISTRIBUTION;
SHALLOW IMPURITIES;
SILICON CARBIDE;
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EID: 37849009024
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-425-1.51 Document Type: Conference Paper |
Times cited : (1)
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References (8)
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