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Volumn 527-529, Issue PART 1, 2006, Pages 51-54

Resistivity distribution in undoped 6H-SiC boules and wafers

Author keywords

Compensation; Deep centers; Physical vapor deposition; Shallow impurities; Stoichiometry; Uniformity

Indexed keywords

CRYSTAL GROWTH; HOLE TRAPS; PHYSICAL VAPOR DEPOSITION; STOICHIOMETRY; WAFER BONDING;

EID: 37849009024     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.51     Document Type: Conference Paper
Times cited : (1)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.