Fast characterization of threshold voltage fluctuation in MOS devices

IEEE Transactions on Semiconductor Manufacturing

Volumn 21, Issue 4, 2008, Pages 526-533

  Agarwal, Kanak ^a   Hayes, Jerry ^a   Nassif, Sani ^a  

^a IBM   (United States)

Author keywords

Process variation; Random dopant fluctuation; Technology characterization; Test structure; Threshold voltage

Indexed keywords

DIELECTRIC RELAXATION; DRAIN CURRENT; ELECTRONIC EQUIPMENT TESTING; MOSFET DEVICES; RANDOM PROCESSES; SILICON; THRESHOLD VOLTAGE;

BULK CMOS; CHARACTERIZATION METHODS; DEVICE CURRENTS; DOPANT ATOMS; MICROSCOPIC FLUCTUATIONS; PROCESS VARIATION; RANDOM DOPANT FLUCTUATION; SILICON ON INSULATORS; SOURCE VOLTAGES; TEST CHIPS; TEST STRUCTURE; THRESHOLD VOLTAGE FLUCTUATIONS;

MOS DEVICES;

EID: 55649099059     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2008.2004323     Document Type: Conference Paper

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