Resolution enhancement techniques in optical lithography, it's not just a mask problem

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue , 2001, Pages 23-32

  Liebmann, L W ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Alternating phase shifted mask; Resolution enhancement technologies; Sub resolution assist features

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC FIELD EFFECTS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; LIGHT TRANSMISSION; LOGIC CIRCUITS; MASKS;

ATTENUATED PHASE SHIFTED MASK ENHANCED LITHOGRAPHY; OPTICAL PROXIMITY CORRECTION; RESOLUTION ENHANCEMENT TECHNIQUES; SUBRESOLUTION ASSIST FEATURES;

PHOTOLITHOGRAPHY;

EID: 0035188064     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.438332     Document Type: Conference Paper

References (13)

1. High-resolution ultraviolet defect inspection of DAP (darkfield alternate phase) reticles
2. Conjugate twin-shifter for new phase shift method to high resolution lithography
3. Application of alternating phase shift mask to device fabrication
4. Lithographic comparison of assist feature design strategies
5. Optimizing style options for sub-resolution assist features
6. Enabling alternating phase shifted mask designs for a full logic gate level: Design rules and design rule checking
7. Phase shifted design verification routine
8. Enabling alternating phase shifted mask designs for a full logic gate level
9. Application of automatic design migration to alternating phase shifted mask designs
10. Assist features - Challenges and opportunities
11. Phase edge lithography for sub-0.1um electrical channel length in a 200mm full cmos process
12. 170nm gates fabricated by phase shift mask and top anti-reflector process
13. Integration of optical proximity correction strategies in strong phase shifters design for poly-gate layers