Preparation of La-doped BiFe O3 thin films with Fe2+ ions on Si substrates

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Gao, F ^a   Cai, C ^a   Wang, Y ^a   Dong, S ^a   Qiu, X Y ^a   Yuan, G L ^a   Liu, Z G ^a   Liu, J M ^a,b,c  

^a NANJING UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); FERROELECTRICITY; FILM GROWTH; SINTERING; SYNTHESIS (CHEMICAL);

PHASE SINTERING; ROOM TEMPERATURE; SI SUBSTRATES;

THIN FILMS;

EID: 33646860379     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195368     Document Type: Article

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