Ni diffusion and its influence on electrical properties of Al xGa1-xN/GaN heterostructures

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Huang, S ^a   Shen, B ^a   Lin, F ^a   Ma, N ^a   Xu, F J ^a   Miao, Z L ^a   Song, J ^a   Lu, L ^a   Liu, F ^a   Wang, Y ^a   Qin, Z X ^a   Yang, Z J ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON GAS; GALLIUM; HETEROJUNCTIONS; NICKEL; NICKEL ALLOYS; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES; TWO DIMENSIONAL ELECTRON GAS;

CAP LAYERS; CAPTURE CROSS SECTIONS; DEEP LEVELS; ELECTRICAL PROPERTIES; HALL MEASUREMENTS; HETEROSTRUCTURE; HETEROSTRUCTURES; NI DIFFUSIONS; ROOM TEMPERATURES; THERMAL ANNEALING;

ANNEALING;

EID: 55149118745     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3010371     Document Type: Article

References (19)

1. Z. J. Lin, H. Kim, J. Lee, and W. Lu, Appl. Phys. Lett. 84, 1585 (2004).
2. H. Kim, J. Lee, D. M. Liu, and W. Lu, Appl. Phys. Lett. 86, 143505 (2005).
3. S. N. Mohammad, J. Appl. Phys. 97, 063703 (2005).
4. H. Kim, M. Schuette, H. Jung, J. Song, J. Lee, and W. Lu, Appl. Phys. Lett. 89, 053516 (2006).
5. Z. J. Lin and W. Lu, J. Appl. Phys. 99, 014504 (2006).
6. J. Z. Zhao, Z. J. Lin, T. D. Corrigan, Z. Wang, Z. D. You, and Z. G. Wang, Appl. Phys. Lett. 91, 173507 (2007).
7. M. H. Kim, S. N. Lee, C. Huh, S. Y. Park, J. Y. Han, J. M. Seo, and S. J. Park, Phys. Rev. B 61, 10966 (2000).
8. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, Appl. Phys. Lett. 71, 2794 (1997).
9. C. Y. Hsu, W. H. Lan, and Y. C. Wu, Appl. Phys. Lett. 83, 2447 (2003).
10. W. Götz, N. M. Johnson, H. Amano, and I. Akasaki, Appl. Phys. Lett. 65, 463 (1994).
11. Z. Q. Fang, D. C. Look, and L. Polenta, J. Phys.: Condens. Matter 14, 13061 (2002).
12. S. Stolt and K. Bohlin, Solid-State Electron. 28, 1215 (1985).
13. P. A. Tove, K. Bohlin, and H. Norde, Surf. Sci. 132, 264 (1983).
14. N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 89, 092107 (2006).
15. S. M. Wang, C. H. Chen, S. J. Chang, Y. K. Su, and B. R. Huang, Mater. Sci. Eng., B 117, 107 (2005).
16. S. J. Chang, W. C. Lai, J. F. Chen, S. C. Chen, B. R. Huang, C. H. Liu, and U. H. Liaw, Mater. Charact. 49, 337 (2003).
17. S. M. Myers, M. Seibt, and W. Schroter, J. Appl. Phys. 88, 3795 (2000).
18. M. ZaJac, J. Gosk, E. Jrzanka, S. Stelmakh, M. Palczewska, A. Wysmolek, and K. Korona, J. Alloys Compd. 456, 324 (2008).
19. J. K. Sheu, Y. K. Su, and G. C. Chi, J. Appl. Phys. 83, 3172 (1998).