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Materials Science and Engineering: B

Volumn 117, Issue 2, 2005, Pages 107-111

Mg-doped GaN activated with Ni catalysts

(5) Wang, S M a Chen, C H b Chang, S J a Su, Y K a Huang, B R c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b CHENG SHIU UNIVERSITY (Taiwan)

c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

LED; MOCVD; Ni catalysts; p Type GaN

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; CATALYSTS; DOPING (ADDITIVES); ELECTRON BEAMS; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL; OHMIC CONTACTS; RAPID THERMAL ANNEALING;

CATALYTIC FILMS; CONTACT RESISTANCE; HOLE CONCENTRATION; NI CATALYSTS; P-TYPE GAN;

GALLIUM NITRIDE;

EID: 13544272568 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2004.10.024 Document Type: Article

Times cited : (4)

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