Characteristics of metal-ferroelectric-insulator-semiconductor structure using La-modified Bi4Ti3O12 as the ferroelectric layer

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 773-778

  Wu, Di ^a   Li, Aidong ^a   Ming, Nanben ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

BLT; Chemical solution deposition; Memory window; MFIS structure

Indexed keywords

DEPOSITION; ELECTRIC INSULATORS; FERROELECTRIC MATERIALS; SEMICONDUCTING BISMUTH COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

CHEMICAL SOLUTION DEPOSITION;

SEMICONDUCTOR MATERIALS;

EID: 0037391762     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00998-X     Document Type: Conference Paper

References (13)

1. Scott J.F. Ferroelectr. Rev. 1:1998;1.
2. Heyman P.M., Heilmeier G.H. Proc. IEEE. 54:1996;842.
3. Mathews S., Ramesh R., Venkatesan T., Benedetto J. Science. 276:1997;238.
4. Han J.-P., Guo X., Ma T.-P. Integr. Ferroelectr. 22:1998;213.
5. Kijima T., Matsunaga H. Jpn. J. Appl. Phys. 38:1999;2281.
6. Park B.H., Kang B.S., Bu S.D., Noh T.W., Lee J., Jo W. Nature. 401:1999;682.
7. Wu D., Li A.D., Zhu T., Liu Z.G., Ming N.B. J. Appl. Phys. 88:2000;5941.
8. Choi T., Kim Y.S., Yang C.W., Lee J. Appl. Phys. Lett. 79:2001;1516.
9. Fujisaki Y., Kijima T., Ishiwara H. Appl. Phys. Lett. 78:2001;1285.
10. Zhu J., Zhang X., Zhu Y., Desu S.B. J. Appl. Phys. 83:1998;1610.
11. Park B.-E., Ishiwara H. Appl. Phys. Lett. 79:2001;806.
12. Nicollian E.H., Brews J.R. MOS (Metal Oxide Semiconductor) Physics and Technology. 1982;Wiley, Chichester.
13. Sze S.M. Physics of Semiconductor. 2nd Edition:1981;Wiley, New York.