(Na0.5Bi0.5)0.87Pb0.13TiO 3 thin films on different substrates for ferroelectric memory applications

Applied Physics Letters

Volumn 91, Issue 19, 2007, Pages

  Yang, C H ^a   Hu, G D ^a   Sun, X Q ^b  

^a UNIVERSITY OF JINAN   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; DIFFUSION BARRIERS; ELECTRIC FIELDS; FERROELECTRICITY; LEAKAGE CURRENTS; PHASE TRANSITIONS; SEMICONDUCTOR DEVICES; SHAPE MEMORY EFFECT;

CAPACITANCE-VOLTAGE MEASUREMENTS; FERROELECTRIC MEMORY APPLICATIONS; METAL ORGANIC DECOMPOSITION METHOD; POLARIZATION-ELECTRIC FIELD;

THIN FILMS;

EID: 36048968148     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2811957     Document Type: Article

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