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Journal of Crystal Growth

Volumn 271, Issue 1-2, 2004, Pages 90-98

Ferroelectric (Bi,Dy)4Ti3O12 thin films deposited on Pt(1 1 1)/Ti/SiO2/Si and p-type si(1 0 0) substrates

(3) Kim, Sang Su a Song, Jae Sung b Kwon, Sik Chol c

a Changwon National University (South Korea)

b Korea Electrotechnology Research Institute (KERI) (South Korea)

c Korea Institute of Machine and Materials (South Korea)

Author keywords

A1. Dysprosium doping; A3. Sol gel deposition; B1. Bismuth titanates; B2. Ferroelectric materials

Indexed keywords

COERCIVE FORCE; DOPING (ADDITIVES); DYSPROSIUM; PLATINUM; POLARIZATION; SEMICONDUCTOR MATERIALS; SILICON; SOL-GELS; SPIN COATING; SUBSTITUTION REACTIONS; TITANIUM COMPOUNDS;

BISMUTH TITANATES; CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; DYSPROSIUM DOPING; SOL-GEL DEPOSITION;

FERROELECTRIC THIN FILMS;

EID: 4944242444 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.07.029 Document Type: Article

Times cited : (14)

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