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Volumn 39, Issue 7 A, 2000, Pages 3888-3895
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Control of polycrystalline silicon structure by the two-step deposition method
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Author keywords
Amorphous silicon; Catalytic chemical vapor deposition; Grain size; Hot wire chemical vapor deposition; Incubation layer; Microcrystalline silicon; Nucleation; Polycrystalline silicon; Surface morphology
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHEMICAL VAPOR DEPOSITION;
CRYSTAL STRUCTURE;
FILM PREPARATION;
GRAIN SIZE AND SHAPE;
MORPHOLOGY;
RAMAN SPECTROSCOPY;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING FILMS;
SURFACES;
THERMAL EFFECTS;
TRANSMISSION ELECTRON MICROSCOPY;
CATALYTIC CHEMICAL VAPOR DEPOSITION;
POLYCRYSTALLINE SILICON STRUCTURE;
STRUCTURAL PROPERTIES;
TWO STEP DEPOSITION METHOD;
POLYCRYSTALLINE MATERIALS;
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EID: 0034215441
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.3888 Document Type: Article |
Times cited : (15)
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References (15)
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