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Volumn 39, Issue 7 A, 2000, Pages 3888-3895

Control of polycrystalline silicon structure by the two-step deposition method

Author keywords

Amorphous silicon; Catalytic chemical vapor deposition; Grain size; Hot wire chemical vapor deposition; Incubation layer; Microcrystalline silicon; Nucleation; Polycrystalline silicon; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; FILM PREPARATION; GRAIN SIZE AND SHAPE; MORPHOLOGY; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SURFACES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0034215441     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3888     Document Type: Article
Times cited : (15)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.