Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 7, 2006, Pages 1524-1529

  Ishida, Hidetoshi ^a   Murata, Tomohiro ^a   Ishii, Motonori ^a   Hirose, Yutaka ^a   Uemoto, Yasuhiro ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a Semiconductor Device Research Center   (Japan)

Author keywords

Direction; Field effect transistor (FET); Finite element method; GaN; Orientation; Piezoelectric; Stress

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; STIFFNESS;

GATE ORIENTATION; HETEROJUNCTION FIELD-EFFECT TRANSISTORS; PIEZOELECTRIC CHARGE DISTRIBUTION;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 33745728936     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.876398     Document Type: Article

References (13)

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