-
1
-
-
0000847215
-
Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
-
R. L. Sellin, C. Ribbat, M. Grundmann, N. N. Ledentsov, and D. Bimberg, "Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers," Appl. Phys. Lett., vol. 78, no. 9, pp. 1207-1209, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.78
, Issue.9
, pp. 1207-1209
-
-
Sellin, R.L.1
Ribbat, C.2
Grundmann, M.3
Ledentsov, N.N.4
Bimberg, D.5
-
2
-
-
0347713755
-
Dependence of the emission wavelength on the internal electric field in quantum-dot laser structures grown by metal-organic chemical vapor deposition
-
A. Passaseo, G. Maruccio, M. D. Vittorio, S. D. Rinaldis, T. T. R. Rinaldi, and R. Cingolani, "Dependence of the emission wavelength on the internal electric field in quantum-dot laser structures grown by metal-organic chemical vapor deposition," Appl. Phys. Lett., vol. 79, no. 10, pp. 1435-1437, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.79
, Issue.10
, pp. 1435-1437
-
-
Passaseo, A.1
Maruccio, G.2
Vittorio, M.D.3
Rinaldis, S.D.4
T.T.R. Rinaldi5
Cingolani, R.6
-
3
-
-
0001420731
-
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
-
P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, J. J. Finley, J. A. Barker, E. P. O'Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, and J. C. Clark, "Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots," Phys. Rev. Lett., vol. 84, no. 4, pp. 733-736, 2000.
-
(2000)
Phys. Rev. Lett.
, vol.84
, Issue.4
, pp. 733-736
-
-
Fry, P.W.1
Itskevich, I.E.2
Mowbray, D.J.3
Skolnick, M.S.4
Finley, J.J.5
Barker, J.A.6
O'Reilly, E.P.7
Wilson, L.R.8
Larkin, I.A.9
Maksym, P.A.10
Hopkinson, M.11
Al-Khafaji, M.12
David, J.P.R.13
Cullis, A.G.14
Hill, G.15
Clark, J.C.16
-
4
-
-
0038219641
-
Absence of correlation between built-in electric dipole moment and quantum Stark effect in single InAs/GaAs self-assembled quantum dots
-
W. Sheng and J.-P. Leburton, "Absence of correlation between built-in electric dipole moment and quantum Stark effect in single InAs/GaAs self-assembled quantum dots," Phys. Rev. B, vol. 67, pp. 1 253 081-1 253 084, 2003.
-
(2003)
Phys. Rev. B
, vol.67
, pp. 1253081-1253084
-
-
Sheng, W.1
Leburton, J.-P.2
-
5
-
-
0036492679
-
A combined investigation of lateral and vertical Stark effect in InAs self-assembled quantum dots in waveguide structures
-
O. Wolst, M. Schardt, M. Kahl, S. Malzer, and G. H. Dohler, "A combined investigation of lateral and vertical Stark effect in InAs self-assembled quantum dots in waveguide structures," Physica E, vol. 12, pp. 283-288, 2002.
-
(2002)
Physica E
, vol.12
, pp. 283-288
-
-
Wolst, O.1
Schardt, M.2
Kahl, M.3
Malzer, S.4
Dohler, G.H.5
-
6
-
-
0035147834
-
Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy
-
P. W. Fry, M. S. Skolnick, D. J. Mowbray, I. E. Itskevich, J. J. Finley, L. R. Wilson, K. L. Schumacher, J. A. Barker, E. P. O'Reilly, M. Al-Khafaji, A. G. Cullis, M. Hopkinson, J. C. Clark, and G. Hill, "Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy," Physica E, vol. 9, pp. 106-113, 2001.
-
(2001)
Physica E
, vol.9
, pp. 106-113
-
-
Fry, P.W.1
Skolnick, M.S.2
Mowbray, D.J.3
Itskevich, I.E.4
Finley, J.J.5
Wilson, L.R.6
Schumacher, K.L.7
Barker, J.A.8
O'Reilly, E.P.9
Al-Khafaji, M.10
Cullis, A.G.11
Hopkinson, M.12
Clark, J.C.13
Hill, G.14
-
7
-
-
0038307030
-
1-x As quantum dot laser structures grown by metalorganic chemical vapor deposition and molecular beam epitaxy
-
1-x As quantum dot laser structures grown by metalorganic chemical vapor deposition and molecular beam epitaxy," Appl. Phys. Lett., vol. 82, no. 21, pp. 3632-3634, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, Issue.21
, pp. 3632-3634
-
-
Passaseo, A.1
Vittorio, M.D.2
Todaro, M.3
Tarantini, I.4
Giorgi, M.d.5
Cingolani, R.6
Taurino, A.7
Catalano, M.8
Fiore, A.9
Markus, A.10
Chen, J.X.11
Paranthoen, C.12
Oesterle, U.13
Ilegems, M.14
-
8
-
-
0035848270
-
Nature of the Stanski-Krastanow transition during epitaxy of InGaAs on GaAs
-
T. Walther, A. G. Cullis, D. J. Norris, and M. Hopkinson, "Nature of the Stanski-Krastanow transition during epitaxy of InGaAs on GaAs," Phys. Rev. Lett., vol. 86, no. 11, pp. 2381-2384, 2001.
-
(2001)
Phys. Rev. Lett.
, vol.86
, Issue.11
, pp. 2381-2384
-
-
Walther, T.1
Cullis, A.G.2
Norris, D.J.3
Hopkinson, M.4
-
9
-
-
79956008217
-
Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy
-
D. M. Bruls, J. W. A. M. Vugs, P. M. Koenraad, H. W. M. Salemink, J. H. Wolter, M. Hopkinson, M. S. Skolnick, F. Long, and S. P. A. Gill, "Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy," Appl. Phys. Lett., vol. 81, no. 9, pp. 1708-1710, 2002.
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.9
, pp. 1708-1710
-
-
Bruls, D.M.1
Vugs, J.W.A.M.2
Koenraad, P.M.3
Salemink, H.W.M.4
Wolter, J.H.5
Hopkinson, M.6
Skolnick, M.S.7
Long, F.8
Gill, S.P.A.9
-
10
-
-
0000567687
-
Scanning transmission-electron microscopy study of InAs/GaAs quantum dots
-
P. D. Siverns, S. Malik, G. McPherson, D. Childs, C. Roberts, R. Murray, B. A. Joyce, and H. Davock, "Scanning transmission-electron microscopy study of InAs/GaAs quantum dots," Phys. Rev. B, vol. 58, no. 16, pp. R10127-RI0130, 1998.
-
(1998)
Phys. Rev. B
, vol.58
, Issue.16
-
-
Siverns, P.D.1
Malik, S.2
McPherson, G.3
Childs, D.4
Roberts, C.5
Murray, R.6
Joyce, B.A.7
Davock, H.8
-
11
-
-
0031185493
-
Temperature dependent lasing characteristics of multi-stacked quantum dot lasers
-
H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama, and H. Ishikawa, "Temperature dependent lasing characteristics of multi-stacked quantum dot lasers," Appl. Phys. Lett., vol. 71, no. 2, pp. 193-195, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.71
, Issue.2
, pp. 193-195
-
-
Shoji, H.1
Nakata, Y.2
Mukai, K.3
Sugiyama, Y.4
Sugawara, M.5
Yokoyama, N.6
Ishikawa, H.7
-
12
-
-
5444274555
-
Characteristics of MOCVD grown InGaAs quantum dot lasers
-
to be published
-
P. Lever, M. Buda, H. H. Tan, and C. Jagadish, "Characteristics of MOCVD grown InGaAs quantum dot lasers," IEEE Photon. Technol. Lett., to be published.
-
IEEE Photon. Technol. Lett.
-
-
Lever, P.1
Buda, M.2
Tan, H.H.3
Jagadish, C.4
-
13
-
-
0035360426
-
Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots
-
G. Saint-Girons, A. Mereuta, G. Patriarche, J. M. Gérard, and I. Sagnes, "Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots," Opt. Mater., vol. 17, no. 1-2, pp. 263-266, 2001.
-
(2001)
Opt. Mater.
, vol.17
, Issue.1-2
, pp. 263-266
-
-
Saint-Girons, G.1
Mereuta, A.2
Patriarche, G.3
Gérard, J.M.4
Sagnes, I.5
-
14
-
-
0344897227
-
Comparison of InGaAs quantum dot lasers with and without strain compensation layers
-
P. Lever, M. Buda, H. H. Tan, and C. Jagadish, "Comparison of InGaAs quantum dot lasers with and without strain compensation layers," in Proc. IEEE LEOS Annu. Meeting, vol. 2, 2003, pp. 951-952.
-
(2003)
Proc. IEEE LEOS Annu. Meeting
, vol.2
, pp. 951-952
-
-
Lever, P.1
Buda, M.2
Tan, H.H.3
Jagadish, C.4
-
15
-
-
2942521387
-
InGaAs quantum dots grown with GaP strain compensation layers
-
P. Lever, H. H. Tan, and C. Jagadish, "InGaAs quantum dots grown with GaP strain compensation layers," J. Appl. Phys., vol. 95, no. 10, pp. 5710-5714, 2004.
-
(2004)
J. Appl. Phys.
, vol.95
, Issue.10
, pp. 5710-5714
-
-
Lever, P.1
Tan, H.H.2
Jagadish, C.3
-
16
-
-
0037514595
-
Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design
-
May
-
M. Buda, J. Hay, H. H. Tan, J. Wong-Leung, and C. Jagadish, "Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design," IEEE J. Quantum Electron., vol. 39, pp. 625-633, May 2003.
-
(2003)
IEEE J. Quantum Electron.
, vol.39
, pp. 625-633
-
-
Buda, M.1
Hay, J.2
Tan, H.H.3
Wong-Leung, J.4
Jagadish, C.5
-
17
-
-
0030104203
-
Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration
-
A. S. Pabla, J. Woodhead, E. A. Khoo, R. Grey, J. P. R. David, and G. J. Rees, "Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration," Appl. Phys. Lett., vol. 68, no. 12, pp. 1595-1597, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, Issue.12
, pp. 1595-1597
-
-
Pabla, A.S.1
Woodhead, J.2
Khoo, E.A.3
Grey, R.4
David, J.P.R.5
Rees, G.J.6
-
18
-
-
21544473468
-
Determining the electric field in [111] strained-layer quantum wells
-
R. L. Tober and T. B. Bahder, "Determining the electric field in [111] strained-layer quantum wells," Appl. Phys. Lett., vol. 63, no. 17, pp. 2369-2371, 1993.
-
(1993)
Appl. Phys. Lett.
, vol.63
, Issue.17
, pp. 2369-2371
-
-
Tober, R.L.1
Bahder, T.B.2
-
19
-
-
0030264863
-
Laser diodes in piezoelectric quantum-well structures
-
C. Cooper, D. I. Westwood, and P. Blood, "Laser diodes in piezoelectric quantum-well structures," Appl. Phys. Lett., vol. 69, no. 16, pp. 2415-2417, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, Issue.16
, pp. 2415-2417
-
-
Cooper, C.1
Westwood, D.I.2
Blood, P.3
-
20
-
-
0001737355
-
Theory of random population for quantum dots
-
M. Grundmann and D. Bimberg, "Theory of random population for quantum dots," Phys. Rev. B, vol. 55, no. 15, pp. 9740-9745, 1997.
-
(1997)
Phys. Rev. B
, vol.55
, Issue.15
, pp. 9740-9745
-
-
Grundmann, M.1
Bimberg, D.2
-
21
-
-
0035280355
-
Thermodynamic balance in quantum dot lasers
-
H. D. Summers, J. D. Thomson, P. M. Smowton, P. Blood, and M. Hopkinson, "Thermodynamic balance in quantum dot lasers," Semicond. Sci. Technol., vol. 16, pp. 140-143, 2001.
-
(2001)
Semicond. Sci. Technol.
, vol.16
, pp. 140-143
-
-
Summers, H.D.1
Thomson, J.D.2
Smowton, P.M.3
Blood, P.4
Hopkinson, M.5
-
22
-
-
0037132296
-
Continuous absoprtion background and decoherence in quantum dots
-
A. Vasanelli, R. Fereira, and G. Bastard, "Continuous absoprtion background and decoherence in quantum dots," Phys. Rev. Lett., vol. 89, no. 21, pp. 2 168 041-2168 044, 2002.
-
(2002)
Phys. Rev. Lett.
, vol.89
, Issue.21
, pp. 2168041-2168044
-
-
Vasanelli, A.1
Fereira, R.2
Bastard, G.3
-
23
-
-
0037113055
-
Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots
-
M. Tadic, F. M. Peeters, and K. L. Janssens, "Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots," J. Appl. Phys., vol. 92, no. 10, pp. 5819-5829, 2002.
-
(2002)
J. Appl. Phys.
, vol.92
, Issue.10
, pp. 5819-5829
-
-
Tadic, M.1
Peeters, F.M.2
Janssens, K.L.3
-
24
-
-
0030687246
-
Self organization phenomena of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
-
F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, F. Bertram, J. Christen, A. Kosogov, and P. Werner, "Self organization phenomena of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition," J. Cryst. Growth, vol. 170, no. 1-4, pp. 568-573, 1997.
-
(1997)
J. Cryst. Growth
, vol.170
, Issue.1-4
, pp. 568-573
-
-
Heinrichsdorff, F.1
Krost, A.2
Grundmann, M.3
Bimberg, D.4
Bertram, F.5
Christen, J.6
Kosogov, A.7
Werner, P.8
-
25
-
-
0037104327
-
Stanski-Krastanow, transition and epitaxial Island growth
-
A. G. Cullis, D. J. Norris, T. Walther, M. A. Migliorato, and M. Hopkinson, "Stanski-Krastanow transition and epitaxial Island growth," Phys. Rev. B, vol. 66, pp. 081 305(R)-1-081 305(R)-4, 2002.
-
(2002)
Phys. Rev. B
, vol.66
, pp. 1-4
-
-
Cullis, A.G.1
Norris, D.J.2
Walther, T.3
Migliorato, M.A.4
Hopkinson, M.5
-
26
-
-
0000970937
-
Absorption spectra and optical transitions in InAs/GaAs self-assembled quantum dots
-
M. A. Cusack, P. R. Briddon, and M. Jaros, "Absorption spectra and optical transitions in InAs/GaAs self-assembled quantum dots," Phys. Rev. B, vol. 56, no. 7, pp. 4047-4050, 1997.
-
(1997)
Phys. Rev. B
, vol.56
, Issue.7
, pp. 4047-4050
-
-
Cusack, M.A.1
Briddon, P.R.2
Jaros, M.3
-
27
-
-
0035423426
-
Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser
-
L. V. Asryan, M. Grundmann, N. N. Ledentsov, O. Stier, R. A. Suris, and D. Bimberg, "Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser," J. Appl. Phys., vol. 90, no. 3, pp. 1666-1668, 2001.
-
(2001)
J. Appl. Phys.
, vol.90
, Issue.3
, pp. 1666-1668
-
-
Asryan, L.V.1
Grundmann, M.2
Ledentsov, N.N.3
Stier, O.4
Suris, R.A.5
Bimberg, D.6
-
28
-
-
0036784073
-
Wetting layer evolution in InAs/GaAs [001] heteroepitaxy: Effects of surface reconstruction and strain
-
T. J. Krzyzewski, P. Joyce, G. R. Bell, and T. Jones, "Wetting layer evolution in InAs/GaAs [001] heteroepitaxy: Effects of surface reconstruction and strain," Surf. Sci., vol. 517, pp. 8-16, 2002.
-
(2002)
Surf. Sci.
, vol.517
, pp. 8-16
-
-
Krzyzewski, T.J.1
Joyce, P.2
Bell, G.R.3
Jones, T.4
-
29
-
-
0031558192
-
Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition
-
F. Heinrichsdorff, M. H. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A. O. Kosogov, and P. Werner, "Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition," Appl. Phys. Lett., vol. 71, no. 1, pp. 22-24, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.71
, Issue.1
, pp. 22-24
-
-
Heinrichsdorff, F.1
Mao, M.H.2
Kirstaedter, N.3
Krost, A.4
Bimberg, D.5
Kosogov, A.O.6
Werner, P.7
-
30
-
-
0036662295
-
Selective growth of InAs quantum dots by metal-organic chemical vapor deposition
-
July-Aug
-
T. S. Yeoh, R. S. Swint, A. Gaur, V. C. Elarde, and J. J. Coleman, "Selective growth of InAs quantum dots by metal-organic chemical vapor deposition," IEEE J. Select. Topics Quantum Electron., vol. 8, pp. 833-7, July-Aug. 2002.
-
(2002)
IEEE J. Select. Topics Quantum Electron.
, vol.8
, pp. 833-837
-
-
Yeoh, T.S.1
Swint, R.S.2
Gaur, A.3
Elarde, V.C.4
Coleman, J.J.5
|