Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

IEEE Journal of Quantum Electronics

Volumn 39, Issue 5, 2003, Pages 625-633

  Buda, M ^a   Hay, J ^a   Tan, H H ^a   Wong Leung, J ^a   Jagadish, Chennupati ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Asymmetric structure; Quantum well lasers; Semiconductor lasers; Thin p clad

Indexed keywords

ANNEALING; GOLD; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT SCATTERING; METALLIZING; OHMIC CONTACTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TITANIUM COMPOUNDS;

ASYMMETRIC STRUCTURE DESIGN; INDIUM GALLIUM ARSENIDE SEMICONDUCTOR LASER DIODES; OHMIC CONTACT HEAT TREATMENT;

SEMICONDUCTOR LASERS;

EID: 0037514595     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.810270     Document Type: Article

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