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Volumn 82, Issue 21, 2003, Pages 3632-3634

Comparison of radiative and structural properties of 1.3 μm InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0038307030     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1578182     Document Type: Article
Times cited : (30)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.