Comparison of quantum dot lasers with and without strain compensation layers

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2003, Pages 951-952

  Lever, P ^a   Buda, M ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL ORIENTATION; GROUND STATE; MAGNETIC MOMENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; STRAIN;

EXCITED STATE; QUANTUM DOT LASERS; STRAIN COMPENSATION LAYERS; THIN P CLAD STRUCTURES; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0344897227     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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