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Volumn 68, Issue 12, 1996, Pages 1595-1597
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Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
ELECTRIC FIELD EFFECTS;
ELECTROLUMINESCENCE;
INTEGRATED OPTOELECTRONICS;
MODULATORS;
MOLECULAR BEAM EPITAXY;
PIEZOELECTRICITY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
ELECTRIC FIELD SCREENING;
ELECTROABSORPTION MODULATORS;
FORWARD BIASED CURRENT INJECTION;
LASING;
PIEZOELECTRIC QUANTUM WELL LASERS;
QUANTUM WELL LASERS;
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EID: 0030104203
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.115662 Document Type: Article |
Times cited : (32)
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References (18)
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