Effect of radical species density and ion bombardment during ashing of extreme ultralow- κ interlevel dielectric materials

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Worsley, M A ^a   Bent, S F ^a   Fuller, N C M ^b   Tai, T L ^c   Doyle, J ^b   Rothwell, M ^b   Dalton, T ^b  

^a Stanford University   (United States)

^b IBM RESEARCH   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DAMASCENE STRUCTURE; INTERLEVEL DIELECTRIC MATERIALS; ION ANGULAR DISTRIBUTION FUNCTION; RADICAL SPECIES DENSITY;

CORRELATION METHODS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ION BOMBARDMENT; PLASMA DIAGNOSTICS; X RAY PHOTOELECTRON SPECTROSCOPY;

DENSITY (OPTICAL);

EID: 33846283096     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2405123     Document Type: Article

References (26)

1. International Technology Roadmap for Semiconductors (ITRS) (Santa Clara, CA, 2005).
2. P.-T. Liu, T.-C. Chang, Y.-S. Mor, and S. M. Sze, Jpn. J. Appl. Phys., Part 1 38, 3482 (1999).
3. T. C. Chang, J. Electrochem. Soc. 146, 3802 (1999).
4. T. C. Chang, Y. S. Mor, P. T. Liu, T. M. Tsai, C. W. Chen, Y. J. Mei, and S. M. Sze, Thin Solid Films 398/399, 632 (2001).
5. D. Shamiryan, M. R. Baklanov, S. Vanhaelemeersch, and K. Maex, J. Vac. Sci. Technol. B 20, 1923 (2002).
6. M. A. Worsley, S. F. Bent, S. M. Gates, K. Kumar, T. Dalton, and J. C. Hedrick, Mater. Res. Soc. Symp. Proc. 766, 235 (2003).
7. O. Louveau, C. Bourlot, A. Marfoure, I. Kalinovski, J. Su, G. Hills, and D. Louis, Microelectron. Eng. 73/74, 351 (2004).
8. M. A. Worsley, S. F. Bent, S. M. Gates, N. C. M. Fuller, W. Volksen, M. Steen, and T. Dalton, J. Vac. Sci. Technol. B 23, 395 (2005).
9. Y. H. Wang, R. Kumar, X. Zhou, J. S. Pan, and J. W. Chai, Thin Solid Films 473, 132 (2005).
10. H. W. Kim, J. H. Myung, N. H. Kim, C. W. Chung, W. J. Park, C. J. Kang, C. G. Yoo, and D. K. Choi, Vacuum 80, 193 (2005).
11. N. C. M. Fuller, Proceedings of the ECS 2005 International Semiconductor Technology Conference, Shanghai, China, 15-17 March 2005 p. 299.
12. T. J. Dalton, IEEE 2004 International Interconnect Technology Conference, Burlingame, CA, June 7-9 2004 p. 154.
13. M. A. Worsley, S. F. Bent, N. C. M. Fuller, and T. Dalton, J. Appl. Phys. 100, 083301 (2006).
14. J. L. Hedrick, R. D. Miller, C. J. Hawker, K. R. Carter, W. Volksen, D. Y. Yoon, and M. Trollsas, Adv. Mater. (Weinheim, Ger.) 10, 1049 (1998).
15. J. A. Hedstrom, M. F. Toney, E. Huang, H. C. Kim, W. Volksen, T. Magbitang, and R. D. Miller, Langmuir 20, 1535 (2004).
16. H. C. Kim, Chem. Mater. 14, 4628 (2002).
17. Q. R. Huang, W. Volksen, E. Huang, M. Toney, C. W. Frank, and R. D. Miller, Chem. Mater. 14, 3676 (2002).
18. E. F. Connor, Angew. Chem., Int. Ed. 42, 3785 (2003).
19. J. L. Hedrick, T. Magbitang, E. F. Connor, T. Glauser, W. Volksen, C. J. Hawker, V. Y. Lee, and R. D. Miller, Chem.-Eur. J. 8, 3308 (2002).
20. E. Huang, Appl. Phys. Lett. 81, 2232 (2002).
21. G. S. Oehrlein, K. K. Chan, and M. A. Jaso, J. Appl. Phys. 64, 2399 (1988).
22. E. W. McDaniel, J. B. A. Mitchell, and M. E. Rudd, Atomic Collisions: Heavy Particle Projectiles (Wiley-Interscience, New York, 1993).
23. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley-Interscience, New York, 1994).
24. N. C. M. Fuller, I. P. Herman, and V. M. Donnelly, J. Appl. Phys. 90, 3182 (2001).
25. H. C. Straub, P. Renault, B. G. Lindsay, K. A. Smith, and R. F. Stebbings, Phys. Rev. A 52, 1115 (1995).
26. H. C. Straub, P. Renault, B. G. Lindsay, K. A. Smith, and R. F. Stebbings, Phys. Rev. A 54, 2146 (1996).