Novel molecular-structure design for PECVD porous SiOCH films toward 45nm-node, ASICs with k=2.3

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 225-227

  Hayashi, Y ^a   Itoh, F ^a   Harada, Y ^a   Takeuchi, T ^a   Tada, M ^a   Tagami, M ^a   Ohtake, H ^a   Hijioka, K ^a   Saito, S ^a   Onodera, T ^a   Hara, D ^b   Tokudome, K ^b  

^a NEC CORPORATION   (Japan)

^b TOSOH CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; COMPOSITION; DIELECTRIC MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PORE SIZE; POROUS MATERIALS; SILICA; SILICON COMPOUNDS; STRUCTURE (COMPOSITION); X RAY SCATTERING;

MOLECULAR STRUCTURES; MOLECULAR-PORE STACKED (MPS) FILMS; ORGANO-SOLOXANE MOLECULES; SMALL ANGLE X-RAY SCATTERING (SAXS);

DIELECTRIC FILMS;

EID: 8644291029     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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