Short-channel AlGaN/GaN field-plated high-electron-mobility transistors for X-band high power operation

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 1, 2008, Pages 1479-1483

  Lee, Jong Wook ^a   Kuliev, Almaz S ^b   Adesida, Ilesanmi ^b  

^a Kyung Hee University   (South Korea)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Field plate; GaN; HEMT; High speed; Pulsed measurements; Sapphire substrate

Indexed keywords

CORUNDUM; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; LEAKAGE CURRENTS; MOSFET DEVICES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; TRANSISTORS;

FIELD PLATE; GAN; HEMT; HIGH SPEED; PULSED MEASUREMENTS; SAPPHIRE SUBSTRATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 54249143696     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1479     Document Type: Article

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