Thermal stability and electrical characteristics of tungsten nitride gates in metal-oxide-semiconductor devices

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 1, 2008, Pages 872-878

  Huang, Chih Feng ^a   Tsui, Bing Yue ^a   Lu, Chih Hsun ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Metal gate; MOSFET; WN; Work function

Indexed keywords

ARGON; ATOMIC PHYSICS; ATOMS; CONCENTRATION (PROCESS); DESORPTION; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; FINITE DIFFERENCE METHOD; HAFNIUM COMPOUNDS; LOGIC GATES; METALS; NITRIDES; NITROGEN; NONMETALS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS; SPUTTER DEPOSITION; TUNGSTEN; TUNGSTEN COMPOUNDS; WATER POLLUTION; WORK FUNCTION;

ATOMIC RATIOS; EFFECTIVE WORK FUNCTIONS; ELECTRICAL CHARACTERISTICS; ENERGY BANDS; EXCESS NITROGENS; FULLY DEPLETED; GAS RATIOS; GATE MATERIALS; GATE STACKS; METAL GATE; METAL GATES; MOSFET; MOSFETS; NITROGEN CONCENTRATIONS; PINNING EFFECTS; REACTIVE SPUTTER DEPOSITIONS; SEMICONDUCTOR FIELD EFFECTS; SILICON-ON-INSULATOR; SOI DEVICES; THERMAL STABILITIES; TUNGSTEN NITRIDES; WN;

MOSFET DEVICES;

EID: 54249140638     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.872     Document Type: Article

References (24)

1. P. L. Shah: IEEE Trans. Electron Devices 26 (1979) 631.
2. A. K. Sinha, T. E. Smith, T. T. Sheng, and N. N. Axelrod: J. Vac. Sci. Technol. 10 (1973) 436.
3. B. H. Lee and K. Yong: J. Vac. Sci. Technol. B 22 (2004) 2375.
4. H. Noda, H. Sakiyama, Y. Goto, T. Kure, and S. Kimura: Jpn. J. Appl. Phys. 35 (1996) 807.
5. D.-G. Park, Z. J. Luo, N. Edleman, W. Zhu, P. Nguyen, K. Wong, C. Cabral, P. Jamison, B. H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchell, V. Ku, H. Kim, E. Duch, P. Kozlowski, C. D. Emic, V. Narayanan, A. Steegen, R. Wise, R. Rengarajan, H. Ng, A. Sekiguchi, and C. H. Wann: Symp. VLSI Techology Tech. Dig., 2004, p. 186.
6. B. Claflin, M. Binger, and G. Lucovsky: J. Vac. Sci. Technol. A 16 (1998) 1757.
7. J. Lin, A. Tsukune, T. Suzuki, and M. Yamada: J. Vac. Sci. Technol. A 17 (1999) 936.
8. H.-T. Chiu and S.-H. Chuang: J. Mater. Res. 8 (1993) 1353.
9. Y. G. Shen and Y. W. Mai: J. Appl. Phys. 88 (2000) 1380.
10. C. C. Baker and S. Ismat Shah: J. Vac. Sci. Technol. A 20 (2002) 1699.
11. P.-C. Jiang and J. S. Chen: J. Electrochem. Soc. 151 (2004) 0751.
12. H.-J. Cho, T.-H. Cha, K.-Y. Lim, D.-G. Park, J.-Y. Kim, J.-J. Kim, S. Heo, I.-S. Yeo, and J. W. Park: J. Electrochem. Soc. 149 (2002) G403.
13. J. W. Lee, C. H. Han, J.-S. Park, and J. W. Park: J. Electrochem. Soc. 148 (2001) 095.
14. T. Yamada, M. Moriwaki, Y. Harada, S. Fujii, and K. Eriguchi: Microclcctron. Reliab. 41 (2001) 697.
15. B. Y. Tsui, C. F. Huang, and C. H. Lu: J. Electrochern. Soc. 153 (2006) G197.
16. J. W. Klaus, S. J. Ferro, and S. M. George: Appl, Surl". Sci. 162-163 (2000) 479.
17. Y. Z. Hu and S.-P. Tay: 10th IEEE Int. Conf. Advantage Thermal Processing of Semiconductors, 2002, p. 125.
18. K. Nakajima, Y. Akasaka, M. Kaneko, M. Tamaoki, Y. Yamada, T. Shimizu, Y. Ozawa, and K. Suguro: Symp. VLSI Technology Tech. Dig., 1999, p. 95
19. H. Wakabayashi, Y. Saito, K. Takeuchi, T. Mogami, and T. Kunio: IEDM Tech. Dig., 1999, p. 253.
20. P. Ranade, Y.-K. Choi, D. Ha, A. Agarwal, M. Ameen, and T.-J. King: IEDM Tech. Dig., 2002, p. 363.
21. P. Ranade, H. Takeuchi, T.-J. King, and C. Hu: Eiectrochem. Solid-State Lett. 4 (2001) 085.
22. Y.-C. Yeo, P. Ranade, T.-J. King, and C. Hu: IEEE Electron Device Lett. 23 (2002) 342.
23. D. J. DiMaria: J. Appl. Phys. 81 (1997) 3220.
24. I. C. Chen, S. Holland, and C. Hu: IEDM Tech. Dig., 1986, p. 660.