Applications of rapid thermal process to nitridation of tungsten and denudation of WNx for poly-Si/Metal gates

10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002

Volumn , Issue , 2002, Pages 125-130

  Hu, Yao Zhi ^a   Tay, Sing Pin ^a  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; AUGER ELECTRON SPECTROSCOPY; CMOS INTEGRATED CIRCUITS; ELECTRON SPECTROSCOPY; HEAT TREATMENT; NITROGEN; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TUNGSTEN;

AUGER ELECTRON SPECTROSCOPIES (AES); DEVICE PROPERTIES; GATE ELECTRODES; HIGH NITROGEN CONTENT; IN-SITU FORMATIONS; INTERFACE BARRIER; LOW RESISTIVITY; RAPID THERMAL ANNEALING (RTA);

RECONFIGURABLE HARDWARE;

EID: 84962430580     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2002.1039450     Document Type: Conference Paper

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