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Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

Some aspects of exciton thermal exchange in InAs quantum dots coupled with InGaAs/GaAs quantum wells

(1) Torchynska, T V a

a INSTITUTO POLITÉCNICO NACIONAL (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; EXCITED STATES; EXCITONS; INDIUM ARSENIDE; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; QUENCHING; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WELLS;

EXCITATION POWER DEPENDENCES; EXCITON DYNAMICS; INAS QUANTUM DOTS; INGAAS/GAAS; MATHEMATICAL ANALYSES; MOLECULAR-BEAM EPITAXIES; NONRADIATIVE DEFECTS; PHOTO-LUMINESCENCE; PL EXCITATIONS; PL INTENSITIES; QD DENSITIES; QUANTUM WELLS; RATE EQUATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 54049115065 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2965196 Document Type: Article

Times cited : (54)

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