Excitonic transfer in coupled InGaAs/GaAs quantum well to InAs quantum dots

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Mazur, Yu I ^a   Liang, B L ^a   Wang, Zh M ^a   Guzun, D ^a   Salamo, G J ^a   Zhuchenko, Z Ya ^b   Tarasov, G G ^b  

^a UNIVERSITY OF ARKANSAS   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSFER; EXCITATION DENSITIES; EXCITONIC TRANSFER; NONMONOTONIC TEMPERATURE DEPENDENCES;

ELECTRIC EXCITATION; ELECTRON TRANSITIONS; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33750018974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360914     Document Type: Article

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