Ground and excited state energy trend in InAs InGaAs quantum dots monitored by scanning photoluminescence spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 19, 2005, Pages

  Torchynska, T V ^a   Dybiec, M ^b   Ostapenko, S ^b  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29844457084     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.195341     Document Type: Article

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