Mechanically operated random access memory (MORAM) based on an electrostatic microswitch for nonvolatile memory applications

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2785-2789

  Jang, Weon Wi ^a   Lee, Jeong Oen ^a   Yang, Hyun Ho ^a   Yoon, Jun Bo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Abrupt switching; Dynamic random access memory (DRAM); Electrostatic microswitch; Endurance; Microelectromechanical systems (MEMS); Nonvolatile memory; Retention

Indexed keywords

ELECTROSTATIC ACTUATORS;

ABRUPT SWITCHING; DYNAMIC RANDOM ACCESS MEMORY (DRAM); ELECTROSTATIC MICROSWITCH; ENDURANCE; MICROELECTROMECHANICAL SYSTEMS (MEMS); NONVOLATILE MEMORY; RETENTION;

RANDOM ACCESS STORAGE;

EID: 53649105725     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003052     Document Type: Article

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