Nanoscale memory cell based on a nanoelectromechanical switched capacitor

Nature Nanotechnology

Volumn 3, Issue 1, 2008, Pages 26-30

  Jang, Jae Eun ^a,b   Cha, Seung Nam ^a,b   Choi, Young Jin ^a   Kang, Dae Joon ^c   Butler, Tim P ^a   Hasko, David G ^d   Jung, Jae Eun ^b   Kim, Jong Min ^b   Amaratunga, Gehan A J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Sungkyunkwan University   (South Korea)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTROMECHANICAL DEVICES; HIGH-K DIELECTRIC; MRAM DEVICES; NANOTUBES; ULSI CIRCUITS; YARN;

DYNAMIC RANDOM ACCESS MEMORY; FABRICATION PROCESS; MECHANICAL MOVEMENTS; MEMORY APPLICATIONS; NANO-ELECTROMECHANICAL; NANOELECTROMECHANICAL DEVICES; SILICON TECHNOLOGIES; ULTRA LARGE SCALE INTEGRATED;

MULTIWALLED CARBON NANOTUBES (MWCN);

MULTI WALLED NANOTUBE; SILICON;

ARTICLE; COMPUTER MEMORY; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; ELECTRICAL EQUIPMENT; ELECTRODE; FIELD EFFECT TRANSISTOR; INFORMATION STORAGE; INFORMATION TECHNOLOGY; NANELECTROMECHANICAL SWITCHED CAPACITOR; NANOSCALE MEMORY CELL; NANOTECHNOLOGY; PRIORITY JOURNAL; RANDOM ACCESS MEMORY; SIMULATION; STANDARD; STRUCTURE ANALYSIS;

EID: 37849054570     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2007.417     Document Type: Article

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