Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 261-264

  Jang, J E ^a   Cha, S N ^a   Choi, Y ^a   Butler, T P ^a   Kang, D J ^b   Hasko, D G ^c   Jung, J E ^d   Kim, J M ^d   Amaratunga, G A J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC SIGNAL SYSTEMS; NANOTUBES; NEMS; ULSI CIRCUITS;

MECHANICAL MOVEMENT; NANOELECTROMECHANICAL SWITCHES; VERTICAL CAPACITOR STRUCTURE;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 33847735065     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Y. Nakagome, M. Horiguchi, T. Kawahara, and K. Itoh, IBM J. RES. & DEV. 47, 525-552, (2003)
2. T. Rueckes, et al. Science 289, 94-97 (2000)
3. M. Dequesnes, S. V. Rotkin, and N. R. Aluru, Nanotechnology 13, 120-131 (2002)
4. M. Chhowalla, et al. J. Appl. Phys. 90, 5308 (2001).
5. K. B. K. Teo, et a.l Appl. Phys. Lett. 80, 2011 (2002).
6. B. Prince, Semiconductor Memories, 2nd ed., New York,;Wiley, (1991), chap. 6.
7. Y. K.Park, et al. J. Korean Phys. Soc. 44, 112 (2004).