Picosecond photoelectric characteristic in La0.7 Sr0.3 Mn O3 Si p-n junctions

Applied Physics Letters

Volumn 86, Issue 24, 2005, Pages 1-3

  Lu, Hui Bin ^a   Jin, Kui Juan ^a   Huang, Yan Hong ^a   He, Meng ^a   Zhao, Kun ^a   Cheng, Bo Lin ^a   Chen, Zheng Hao ^a   Zhou, Yue Liang ^a   Dai, Sou Yu ^a   Yang, Guo Zhen ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; CHARGE COUPLED DEVICES; HIGH ENERGY ELECTRON DIFFRACTION; LANTHANUM COMPOUNDS; LASER PULSES; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; PHOTOELECTRIC CELLS; PHOTOELECTRICITY; SEMICONDUCTING SILICON; THIN FILMS; X RAY DIFFRACTION;

DOUBLE-EXCHANGE FERROMAGNETISM; ELECTRICAL MODULATION; PHOTOELECTRIC CHARACTERISTICS; PHOTOVOLTAIC SENSITIVITY;

SEMICONDUCTOR JUNCTIONS;

EID: 21344454650     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1946901     Document Type: Article

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