High-speed ablation etching of GaN semiconductor using femtosecond laser

Optics Communications

Volumn 189, Issue 1-3, 2001, Pages 103-106

  Ozono, Kazue ^a   Obara, Minoru ^a   Usui, Akira ^a,b   Sunakawa, Haruo ^a,b  

^a KEIO UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GALLIUM NITRIDE; LASER ABLATION; LASER PULSES; PYROLYSIS; SEMICONDUCTOR LASERS; ULTRAFAST PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

FEMTOSECOND LASERS; LASER ETCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035278276     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0030-4018(01)01002-1     Document Type: Article

References (14)

1. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer, Berlin, 1997.
2. H. Lee, D.B. Oberman, J.S. Hariss, Appl. Phys. Lett. 67 (1995) 1754.
3. R.J. Shul, A.J. Howard, S.J. Pearton et al., J. Vac. Sci. Technol. B 13 (1995) 2016.
4. M.K. Kelly, O. Ambacher, B. Dahlheimer et al., Appl. Phys. Lett. 69 (1996) 1749.
5. H. Chen, R.D. Vispute, V. Talyansky et al., Mater. Res. Symp. Proc. 482 (1998) 1015.
6. T. Akane, K. Sugioka, K. Midorikawa, LPM2000, Omiya, Japan, 14-16 June 2000; Proc. SPIE 4088-016.
7. A. Usui, H. Sunakawa, A. Sakai, A.A. Yamaguchi, Jpn. J. Appl. Phys. Part 2 36 (7B) (1997) L899.
8. H. Yabe, Y. Hirayama, M. Obara, Proc. SPIE 4065 (2000) 868.
9. K. Furusawa, K. Takahashi, H. Kumagai, K. Midorikawa, M. Obara, Appl. Phys. A 69 (1999) S359.
10. T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, K. Ohtsuka, J. Appl. Phys. 82 (1997) 3528.
11. S. Krishnamurthy, K. Nashold, A. Sher, Appl. Phys. Lett. 77 (2000) 355.
12. M. Lenzner, F. Krausz, J. Kruger, W. Kautek, Appl. Surf. Sci. 154-155 (2000) 11.
13. J. Bonse, P. Rudolph, J. Kueger, S. Baudach, W. Kautek, Appl. Surf. Sci. 154-155 (2000) 659.
14. T. Akane, T. Sugioka, H. Ogino, H. Takai, K. Midorikawa, Appl. Surf. Sci. 148 (1999) 133.