Morphology control, dopant incorporation, and selective epitaxial growth of 4H-SiC at low temperatures using CH3Cl growth precursor

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 101-106

  Koshka, Yaroslav ^a   Krishnan, Bharat ^a   Lin, Huang De ^a   Melnychuk, Galyna ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; DEFECTS; DOPING (ADDITIVES); EPITAXIAL GROWTH; NITROGEN;

EPILAYERS; HALO-CARBON PRECURSORS; HOMOEPITAXIAL GROWTH; MASKING MATERIALS; SILICON VAPOR;

SILICON CARBIDE;

EID: 33750310709     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b02-02     Document Type: Conference Paper

References (7)

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2. Y. Koshka, H.-De Lin, G. Melnychuk, C. Wood, submitted to the J. of Crystal Growth.
3. R. Myers, O. Kordina, Z. Shishkin, S. Rao, R. Everly, S.E. Saddow, Mater. Sci. Forum, 483-485 (2005), pp. 73-76.
4. D. Crippa, G.L. Valente, R. Ruggiero, L. Neri, et. al., Mater. Sci. Forum. 483-485 (2005), pp. 67-72.
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6. R. Rurali, P. Godignon, and J. Rebollo, Appl. Phys. Lett. 82, 4298 (2003).
7. Andrei V. Los, and Michael S. Mazzola, J. of Electronic Materials, Vol.30, No.3 (2001), pp. 235-241.