Growth of crystalline silicon carbide by CVD using chlorosilane gases

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 49-58

  Loboda, M J ^a   MacMillan, M F ^a   Wan, J ^a   Chung, G ^a   Carlson, E ^a   Makarov, Y ^b   Galyukov, A ^b   Molnar, M J ^c  

^a DOW CHEMICAL COMPANY   (United States)

^b Semiconduct Technol Research Inc   (United States)

^c Hemlock Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GRAPHITE; NUCLEATION;

CHLOROSILANE GASES; DEVICE TECHNOLOGY; HALOCARBONS; SILICON EPITAXY TECHNOLOGY;

SILICON CARBIDE;

EID: 33750318113     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b02-03     Document Type: Conference Paper

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