Planar GaAs MOSFET using wet thermally oxidized AlGaAs as gate insulator

Electronics Letters

Volumn 36, Issue 4, 2000, Pages 359-361

  Yu, E F ^a   Shen, J ^b   Walther, M ^c   Lee, T C ^a   Zhang, R ^a  

^a MOTOROLA INC   (United States)

^b Arizona State University   (United States)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENCAPSULATION; ETCHING; GATES (TRANSISTOR); INSULATION; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; THERMOOXIDATION; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DEPLETION-MODE DEVICE; WET THERMAL OXIDATION;

MOSFET DEVICES;

EID: 0033895125     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000281     Document Type: Article

References (11)

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