AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric

Solid-State Electronics

Volumn 49, Issue 2, 2005, Pages 213-217

  Lee, Kuan Wei ^a   Sze, Po Wen ^b   Wang, Yeong Her ^a   Houng, Mau Phon ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Gate dielectric; Liquid phase; MOS; PHEMT

Indexed keywords

ANNEALING; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GATE DIELECTRIC; LIQUID PHASE CHEMICAL ENHANCED OXIDATION (LPCEO); LIQUID PHASE OXIDATION; SPACER LAYERS;

MOS DEVICES;

EID: 9544238121     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.07.011     Document Type: Article

References (17)

1. 3 films for electronic and optoelectronic applications. J Appl Phys 1995;77(2):686-93.
2. Wu JY, Wang HH, Sze PW, Wang YH, Houng MP. A planarized shallow-trench-isolation for GaAs MOSFETs fabrication using liquid phase chemical enhanced oxidation process. IEEE Electr Device Lett 2002;23(5):237-9.
3. +Ge gate AlGaAs/GaAs MISFET's. IEEE Trans Electron Device 1989;36(10):2217-22.
4. Takatani S, Matsumoto H, Shigeta J, Ohshika K, Yamashita T, Fukui M. Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFET's. IEEE Trans Electron Device 1998;45(1):1420.
5. 1-xAs-GaAs metal-oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs. Appl Phys Lett 1995; 66(20):2688-90.
6. 3 as the gate insulator. Electron Lett 1996;32(18):1724-6.
7. DeMelo CB, Hall DC, Snider GL, Xu D, Kramer G, El-Zein N. High electron mobility InGaAs-GaAs field effect transistor with thermally oxidized AlAs gate insulator. Electron Lett 2000; 36(l):84-6.
8. Yu EF, Shen J, Walther M, Lee TC, Zhang R. Planar GaAs MOSFET using wet thermally oxidized AlGaAs as gate insulator. Electron Lett 2000;36(4):359-61.
9. 1-xAs layers in a wet ambient. J Appl Phys 1997; 82(7):3548-51.
10. 1-xAs. J Appl Phys 1984;56(6):1895-6.
11. Fischer CW, Teare SW. Anodic oxidation of AlGaAs and detection of the AlGaAs-GaAs heterojunction interface. J Appl Phys 1990;67(5):2608-12.
12. 0.36As. J Appl Phys 1977;48(12):5384-6.
13. Wang HH, Huang CJ, Wang YH, Houng MP. Liquid phase chemical enhanced oxidation for GaAs operated near room temperature. Jpn J Appl Phys Pt 2 1998;37(1):L67-70.
14. Wang HH, Chou DW, Wu JY, Wang YH, Houng MP. Effects of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method. J Appl Phys 2000; 87(5):2629-33.
15. Khan MA, Hu X, Sumin G, Lunev A, Yang J, Gaska R, et al. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor. IEEE Electr Device Lett 2000;21(2): 63-5.
16. Chou DW, Lee KW, Huang JJ, Sze PW, Wu HR, Wang YH, et al. AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide. Jpn J Appl Phys Pt 2 2002;41(7A):L748-50.
17. 0.78As pseudomorphic high electron mobility transistors with an oxidized GaAs gate for improved breakdown voltage characteristics. Solid-State Electron 2003;47(2): 223-8.