Misfit point defects at the epitaxial Lu2O3/(111) Si interface revealed by electron spin resonance

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Stesmans, A ^a   Somers, P ^a   Afanas'Ev, V V ^a   Tian, W ^b   Edge, L F ^b   Schlom, D G ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEFECTS; EPITAXIAL GROWTH; LEAD; LUTETIUM; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OZONE WATER TREATMENT; PASSIVATION; POINT DEFECTS; SPIN DYNAMICS; STANDARDS; TANNING;

AS-GROWN; ELECTRON SPIN RESONANCE; HETEROEPITAXIAL; MOLECULAR-BEAM EPITAXY; SI DANGLING BONDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 51749098198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2974793     Document Type: Article

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