Analysis and implications of parasitic and screening effects on the high-frequency/RF performance of tunneling-carbon nanotube FETs

Proceedings - Design Automation Conference

Volumn , Issue , 2008, Pages 250-255

  Kshirsagar, Chaitanya ^a   El Zeftawi, Mohamed N ^a   Banerjee, Kaustav ^a  

^a University of California   (United States)

Author keywords

Carbon nanotube FET (CNFET); Modeling; RF performance

Indexed keywords

CARBON NANOTUBE FET (CNFET); MODELING; PARASITIC CAPACITANCES; RF PERFORMANCE;

CAPACITANCE; CARBON; COMPUTER AIDED DESIGN; DIGITAL INTEGRATED CIRCUITS; ELECTRON MULTIPLIERS; FIELD EFFECT TRANSISTORS; INDUSTRIAL ENGINEERING; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; OPTIMIZATION; TUNNELING (EXCAVATION);

CARBON NANOTUBES;

EID: 51549095451     PISSN: 0738100X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DAC.2008.4555818     Document Type: Conference Paper

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