Thermal degradation of DRAM retention time: Characterization and improving techniques

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 667-668

  Kim, Y I ^a   Yang, K H ^a   Lee, W S ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

DRAM; Fluorine; Hydrogen; Retention time; Thermal stress; Thermal variation

Indexed keywords

ANNEALING; CAPACITORS; HYDROGEN; MICROPROCESSOR CHIPS; PASSIVATION; PYROLYSIS; RELIABILITY; THERMAL STRESS;

RETENTION TIME; STANDARD DEVIATION; THERMAL VARIATION; VARIABLE RETENTION TIME (VRT);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 3042515082     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. P. J. Restle, J. W. Park, and B. F. Lloyed "DRAM Variable Retention Time," international Electron Devices Meeting. Technical Digest. IEEE, New York, NY 1992, pp. 807-810.
2. 2 Interfece Defects," Appl. Phys. Lett. 57(2), 1990, pp. 162-164.