SCOPUS 정보 검색 플랫폼

Volumn 2005, Issue , 2005, Pages 1034-1037

The origin of variable retention time in DRAM

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; TELEGRAPH;

TELEGRAPH SIGNALS; VARIABLE RETENTION TIME (VRT);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 33847702868 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (54)

References (4)

1
- 0023548492
- A meta-stable leakage phenomenon in DRAM charge storage - Variable hold time
- D. S. Yaney, C. Y. Lu, R. A. Kohler, M. J. Kelly, and J. T. Nelson, "A meta-stable leakage phenomenon in DRAM charge storage - Variable hold time," in 1987 IEDM Tech. Dig., pp. 336-339.
- 1987 IEDM Tech. Dig , pp. 336-339
- Yaney, D.S.¹ Lu, C.Y.² Kohler, R.A.³ Kelly, M.J.⁴ Nelson, J.T.⁵

2
- 85060999879
- DRAM variable retention time
- P. J. Restle, J. W. Park, and B. F. Lloyd, "DRAM variable retention time," in 1992 IEDM Tech. Dig., pp.807-810.
- 1992 IEDM Tech. Dig , pp. 807-810
- Restle, P.J.¹ Park, J.W.² Lloyd, B.F.³

3
- 77955763418
- Thermal Degradation of DRAM Retention Time: Characterization and Improving Techniques
- ndIRPS Proc., 2004, pp. 667-668.
- (2004) ndIRPS Proc , pp. 667-668
- Kim, Y.I.¹ Yang, K.H.² Lee, W.S.³

4
- 84949799252
- A new method for predicting distribution of DRAM retention time
- th IRPS Proc., 2001, pp. 7-11.
- (2001) th IRPS Proc , pp. 7-11
- Mori, Y.¹ Yamada, R.² Kamohara, S.³ Moniwa, M.⁴ Ohyu, K.⁵ Yamanaka, T.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.