A new method for predicting distribution of DRAM retention time

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 7-11

  Mori, Y ^a   Yamada, R ^a   Kamohara, S ^a   Moniwa, M ^a   Ohyu, R ^a   Yamanaka, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

DRAM; Junction leakage; Retention time; Test element group (TEG)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; JUNCTION GATE FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MOSFET DEVICES; PROBABILITY DISTRIBUTIONS; SEMICONDUCTOR DEVICE TESTING; STATISTICAL METHODS;

JUNCTION LEAKAGE CURRENTS; MEMORY CELLS; TEST ELEMENT GROUP;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0034995181     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A new extraction method of retention time from the leakage current in 0.23μm DRAM memory cell
2. Leakage current observation on irregular local PN junctions forming the tail distribution of DRAM retention characteristics, with new test structure
3. Statistical PN junction leakage model with trap level fluctuation for tref (refresh time) - oriented DRAM design