An alternative model for interconnect low-k dielectric lifetime dependence on voltage

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 556-565

  Haase, Gaddi S ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; DEGRADATION; ELECTRIC FIELDS; GATE DIELECTRICS; MATERIALS SCIENCE; MICROELECTRONICS; RELIABILITY;

CONSTANT VOLTAGE STRESS; E-MODEL; LOW-K DIELECTRICS; RELIABILITY PHYSICS;

MOSFET DEVICES;

EID: 51549092563     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558945     Document Type: Conference Paper

References (19)

1. E. T. Ogawa, K. Jinyoung, G. S. Haase, H. C. Mogul, and J. W. McPherson, "Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics," 41st Annual IEEE International Reliability Physics Symposium Proceedings, p. 166, 2003.
2. Z. Tokei, J. Van Aelst, C. Waldfried, O. Escorcia, P. J. Roussel, O. Richard, Y. Travaly, G. P. Beyer, and K. Maex, "Role of dielectric and barrier integrity in reliability of sub-100nm copper low-k interconnects," 43rd Annual IEEE International Reliability Physics Symposium Proceedings, p. 495, 2005.
3. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivam, J. Goill, J. Lloyd, R. Kontra, and J. Aitken, "Comprehensive study of Low-k SiCOH TDDB phenomena and its reliability lifetime model development," 44th Annual IEEE International Reliability Physics Symposium Proceedings, p. 46, 2006.
4. O. R. Rodriguez, W. N. Gill, J. L. Plawsky, T. Y. Tsui, and S. Grunow, "Study of Cu diffusion in porous dielectrics using secondary-ion-mass spectrometry," Journal of Applied Physics, vol. 98, p. 123514, 2005.
5. Y. Li, I. Ciofi, L. Carbonell, K. Maex, and Z. Tokei, "Moisture Related Low-K Dielectric Reliability Before and After Thermal Annealing," 45th Annual IEEE International Reliability Physics Symposium Proceedings, p. 405, 2007
6. A. Berman, "Time-zero dielectric reliability test by a ramp method (for field effect ICs)," 19th Annual IEEE Reliability Physics Symposium Proceedings, p. 204, 1981.
7. K. F. Schuegraf and H. Chenming, "Oxide breakdown model for very low voltages," VLSI Technology 1993. Digest of Technical Papers, p. 43, 1993.
8. T. Pompl, M. Kerber, G. Innertsberger, K. H. Allers, M. Obry, A. Krasemann, and D. Temmler, "Modeling of substrate related extrinsic oxide failure distributions," 40th Annual IEEE International Reliability Physics Symposium Proceedings, p. 393, 2002.
9. K. H. Allers, "Prediction of dielectric reliability from I-V characteristics: Poole-Frenkel conduction mechanism leading to square root E model for silicon nitride MIM capacitor," Microelectronics Reliability, vol. 44, p. 411, 2004.
10. S.-S. Hwang, S.-Y. Jung, J.-K. Jung, and Y.-C. Joo, "Cu Migration-Induced Failure in Inter-Layer Dielectrics," 44th Annual IEEE International Reliability Physics Symposium Proceedings, p. 637, 2006.
11. J. R. Lloyd, E. Liniger, and T. M. Shaw, "Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics," J. Appl. Phys., vol. 98, p. 84109, 2005.
12. T. Pompl, K.-H. Allers, R. Schwab, K. Hofmann, and M. Roehner, "Change of acceleration behavior of time-dependent dielectric breakdown by the BEOL process: indications for hydrogen induced transition in dominant degradation mechanism," 43rd Annual IEEE International Reliability Physics Symposium Proceedings, p. 388, 2005.
13. G. S. Haase and J. W. McPherson, "Modeling of Interconnect Dielectric Lifetime Under Stress Conditions and New Extrapolation Methodologies for Time-Dependent Dielectric Breakdown," 45th Annual IEEE International Reliability Physics Symposium Proceedings, p. 405, 2007.
14. J. W. McPherson and D. A. Baglee, "Acceleration factors for thin gate oxide stressing," 23rd Annual IEEE International Reliability Physics Symposium Proceedings, p. 1, 1985.
15. J. W. McPherson, "Stress dependent activation energy (VLSI failure)," 24th Annual IEEE International Reliability Physics Symposium Proceedings, p. 12, 1986.
16. G. S. Haase, E. T. Ogawa, and J. W. McPherson, "Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits," Journal of applied physics, vol. 98, p. 34503, 2005.
17. F. Irrera, "Degradation kinetics of thermal oxides," Applied Physics Letters, vol. 79, p. 182, 2001.
18. P. E. Nicollian, A. T. Krishnan, C. A. Chancellor, and R. B. Khamankar, "The Traps that cause Breakdown in Deeply Scaled SiON Dielectrics," 2006 International Electron Devices Meeting Proceedings, p. 743, 2006.
19. K. Jinyoung, E. T. Ogawa, and J. W. McPherson, "Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields," 45th Annual IEEE International Reliability Physics Symposium Proceedings, p. 399, 2007.