Modeling of substrate related extrinsic oxide failure distributions

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 393-403

  Pompl, T ^a   Kerber, M ^a   Innertsberger, G ^a   Allers, K H ^a   Obry, M ^a   Krasemann, A ^a   Temmler, D ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Gaussian distribution; Hydrogen; Life estimation; Packaging; Semiconductor device modeling; Silicon; Stress; Voltage; Wafer scale integration; Weibull distribution

Indexed keywords

CHIP SCALE PACKAGES; ELECTRIC POTENTIAL; ELECTRONICS PACKAGING; GAUSSIAN DISTRIBUTION; HYDROGEN; NORMAL DISTRIBUTION; OUTAGES; PACKAGING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICON; SILICON WAFERS; STRESSES; WSI CIRCUITS;

CUMULATIVE FAILURE DISTRIBUTIONS; CZOCHRALSKI SILICON; DEVICE OPERATIONS; FAILURE DISTRIBUTIONS; LIFE ESTIMATION; POWER LAW MODEL; THICKNESS DEPENDENCE; VOLTAGE ACCELERATION;

WEIBULL DISTRIBUTION;

EID: 84949191369     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996669     Document Type: Conference Paper

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